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. 2018 May 4;4(5):eaap9264. doi: 10.1126/sciadv.aap9264

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Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 5 — (A and C) SEM images of two representative SWCNT FETs without (A) and with (C) the carbon-welded joint. Scale bars, 1 μm. The inset AFM images show the deposited carbon (white part) on the SWCNTs. Scale bars, 100 and 200 nm, respectively. (B and D) I_ds versus V_ds of the device (A) and (C), respectively. Gate voltage V_gs = −10 V.