Fig. 7. J–V characteristics of the HOD and EOD are shown for the devices in the absence (neat) or presence (doped) of Ir(ppy)3 (6 wt%). The horizontal broken line shows 100 mA cm–2. The HOD device was assembled with an ITO (110 nm)/PEDOT:PSS (30 nm)/organic layer (60 nm)/α-NPD (20 nm)/Al (100 nm) architecture, and the EOD device was assembled with an ITO (110 nm)/PEDOT:PSS (30 nm)/Ca (5 nm)/organic layer (60 nm)/Cs (1.5 nm)/Al (100 nm) architecture. The organic layer was composed either of a single material (neat) or a material containing 6 wt% Ir(ppy)3 dopant (doped).
