Fig. 1. Schematic and optoelectronic transport of infrared memory device.

(A) Schematic of infrared memory device, showing few-layer MoS₂-PbS nanoplates heterostructure connected to source (S) and drain (D) electrodes. Infrared light entirely illuminates the device. (B) Band alignment of heterostructure. The photogate effect is schematically presented on the PbS side. (C) Transfer characteristic curves of I_sd versus V_g under infrared illumination with variable light power density P. (D) V_g- and P-dependent photocurrent I_ph extracted from transfer characteristic curves in (C). (E) Numerical simulation of carriers density (Δn) in MoS₂ channel via photo injection and V_g injection. (F) Dependence of responsivity and specific detectivity on power density shows maximum R of 2.6 × 10⁷ A/W and D* of 5.5 × 10¹⁵ Jones at P = 0.6 mW cm⁻².