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| Laser Element | Semiconductor Laser Diode Ga-Al-As: Gallium Aluminium Arsenide | |
| Model | MDL-2001 model | |
| Manufacturer | Matsushita Electric Corporation, Tokyo, Japan | |
| Wavelength | 830 ± 15 nm | |
| Output | 1000 mW ± 20% | |
| Mode | Continuous wave mode Contact mode with positive pressure | |
| Irradiated area | diameter in 14 mm: actual area in 1.5 cm2 | |
| Irrariation time | 30 sec | |
| Energy density | 20.1 J/cm2 | |
| Power Supply | 100 VAC, 50–60 Hz |
