Table 1.

Parameters describing the temperature and field dependence of charge generation relative to energetics and morphology from left to right

Blend	Activation energy (meV)	Field dependence (%)	Driving force (meV)	Fullerene correlation length (nm)
1F-PCPDTBT:PCBM	19.5 ± 2.0	27 ± 5	125 ± 10	1.78 ± 0.02
PCPDTBT:PCBM	23.5 ± 3.4	49 ± 6	209 ± 10	1.44 ± 0.02
PCPDTBT:ICBA	44 ± 3	65 ± 5	70 ± 10	1.09 ± 0.02

Activation energies of free charge formation taken from Figs. 3f and 4c, d

Bias dependence of charge generation at 200 K and below bandgap excitation, expressed as the percentage decrease of collected charge when increasing the pre-bias from −2 to 0.4 V

Driving force for electron transfer, which is the energy difference between the relaxed singlet exciton on the donor and of the CT state

Correlation length of the fullerene clusters from GIWAXS