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. 2018 May 23;8:8073. doi: 10.1038/s41598-018-26263-1

Figure 2.

Figure 2

OCMFET electrothermal and electromechanical characterization. (a–b) Variations in the OCMFET current (IDS) upon the application of a thermal stress to the PVDF capacitor coupled to the floating gate. (c) Calibration curves of the sensor, blue (red) points represent the variations of the output current for temperature decrease (increase). The device exhibited a reproducible linear response in the range 8 °C–50 °C. (d) Variations in IDS upon the application of mechanical stress to the PVDF capacitor coupled to the floating gate. (e) Electromechanical characterization of the sensor.