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. 2018 May 24;9:2051. doi: 10.1038/s41467-018-04435-x

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — Shape evolution of an etched pore with all edges terminated by NWs. a–d Atomic resolution HAADF-STEM images showing the shape evolution of an initial NW-terminated parallelogram pore. e Polar plot of etching rates of NW-terminated ZZSe and ZZMo edge. ZZSe-NW (brown) etches more slowly than ZZMo-NW (black). f Simulated etching progress of the NW-terminated parallelogram pore shown in a. Scale bars are 2 nm