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. 2018 Mar 6;5(5):1701067. doi: 10.1002/advs.201701067

Table 3.

EL data for devices A2, B2, and C2

Emitter λEL max [nm] Va) [V] L max [cd m−2] EQEb) [%] CEb) [cd A−1] PEb) [lm W−1] CIE (x, y)
A2 BThThIr (10 wt%) 612 3.5/7.8/12.3 27756 17.5/16.1 27.4/25.2 24.9/10.1 (0.62, 0.38)
B2 BPyThIr (10 wt%) 604 3.4/7.1/9.8 59154 28.5/26.7 54.4/50.9 50.1/23.0 (0.61, 0.39)
C2 BPyPyIr (10 wt%) 604 3.3/8.4/12.8 33659 11.3/10.6 22.0/20.6 18.8/7.0 (0.60, 0.40)
a)

Driving voltages (V) in the order of at 1, 1000, and 10 000 cd m−2, respectively

b)

EQE, CE, and PE in the order of the maximum value and at 1000 cd m−2.