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. 2018 Jun 5;8:8586. doi: 10.1038/s41598-018-26522-1

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Electronic properties of few-layer NiPS₃. (a) Drain current versus drain voltage for various Vg values as given in the figure, at 25 °C. (b) Drain current verses back gate voltage for V_ds ranging from 0 to 5 V. The FET characteristics obtained for a flake thickness of 6.5 nm NiPS₃. (c) Thickness dependent I_on (red) and I_off (blue) currents. (d) Thickness dependence of I_on/I_off ratio.