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. 2018 Jun 6;8:8668. doi: 10.1038/s41598-018-26751-4

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Schematic cross-section of FET back-gated device with BN capped MoTe₂. (b) Optical image of typical MoTe₂ few-layer flake with Ti/Au source drain contacts deposited by EBL. (c) Examples of drain current measurements as a function of gate voltage for a backdated MoTe₂ device. The drain voltage was maintained at 1 VDC. Uncovered MoTe₂ device shows initial n-type semiconducting behavior that switches to p-type after 150 °C. (d) The BN/MoTe₂ device maintains a much greater degree of stability through 100 °C and exhibits a polarity switch to p-type behavior much later at 200 °C.