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. 2018 Jun 6;8:8668. doi: 10.1038/s41598-018-26751-4

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Current-voltage measurements of (a) MoTe₂ and (b) BN/MoTe₂ back-gated FET devices, which were held at 100 °C in air for consecutive time increments as shown in data labels. The drain voltage was maintained at 1 VDC. (c) Mobility of MoTe₂ and MoTe₂/BN devices, shown as a ratio to their initial mobility and plotted as a function of the time for device exposure to 100 °C in air. After 30 minutes, the electron mobility of the uncapped MoTe₂ device had dropped below the measurement noise level and thus is not continued in the plot. (d) Semilog plot comparing on/off ratios of MoTe₂ and MoTe₂/BN devices. The BN-coated device maintains a significantly higher ratio throughout the experiment while the uncapped devices rapidly decreases.