Table 1.

Sheet carrier concentration calculated from Hall effect measurements for low pressure annealed UV-irradiated and non-UV-irradiated STO single crystal samples. The samples were measured immediately after processing and after a further 50 day storage in air. The error indicates the standard deviation obtained from measuring at least four equally treated samples.

Sample	nS (immediate)	nS (50 d)
UV irradiated	(5 ± 1) × 1017 cm−2	(5 ± 1) × 1017 cm−2
Non UV irradiated	(2 ± 0) × 1017 cm−2	<1010 cm−2