Table 2. EL performances of 2TPA-CNa, 3TPA-CN, 2TPE-CN and 3TPE-CN.
| Device | λ EL (nm) | V on (V) | L max (cd m−2) | η P,max (lm w−1) | η C,max (cd A−1) | η ext,max (%) | CIEc (x, y) |
|---|---|---|---|---|---|---|---|
| A | 445 | 6.0 | 2176 | 0.42 | 0.88 | 0.66 | 0.15, 0.10 |
| B | 466 | 4.4 | 7719 | 2.20 | 3.34 | 2.34 | 0.16, 0.16 |
| C | 505 | 6.6 | 4279 | 1.13 | 2.82 | 1.07 | 0.21, 0.41 |
| D | 499 | 4.0 | 10 666 | 5.51 | 8.03 | 3.06 | 0.20, 0.40 |
| E | 461 | 3.0 | 12 363 | 5.06 | 5.21 | 3.89 | 0.15, 0.14 |
| F | 470 | 3.6 | 7257 | 5.02 | 5.04 | 3.35 | 0.15, 0.17 |
| G | 471 | 3.6 | 5906 | 5.06 | 5.07 | 3.27 | 0.14, 0.17 |
| H | 470 | 3.6 | 9345 | 4.52 | 4.57 | 2.63 | 0.15, 0.19 |
| I | 564 | 2.8 | 48 434 | 52.0 | 57.4 | 18.2 | 0.50, 0.50 |
| J | 562 | 3.2 | 47 567 | 41.7 | 50.6 | 15.7 | 0.49, 0.51 |
a
Compound and device pairings are as follows: 2TPA-CN (A)b, 3TPA-CN (B, E–I), 2TPE-CN (C) and 3TPE-CN (D).
b
Device configuration: ITO/MoO3 (10 nm)/X/TPBi (30 nm)/LiF (1 nm)/Al. For device A–D: X = NPB (60 nm)/mCP (15 nm)/emitter (30 nm). For device E: X = 3TPA-CN (70 nm). For device F–H: X = NPB (60 nm)/mCP (10 nm)/BmPyPb:x% 3TPA-CN (20 nm)/BmPyPb (10 nm), x = 30% (F), 40% (G) and 50% (H). For device I–J: X = NPB (60 nm)/mCP (10 nm)/host:PO-01 (20 nm, 10 wt%), host = 3TPA-CN (I) and CBP (J).
c
Abbreviations: Von = turn-on voltage at 1 cd m−2, Lmax = maximum luminance, ηP,max, ηC,max and ηext,max = maximum power, current and external efficiencies, respectively. CIE = Commission International de l'Éclairage coordinates at 8 V.