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. 2018 Jun 27;8:9765. doi: 10.1038/s41598-018-28136-z

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Localized laser-etching of freestanding SiN_x. (a) Laser-etched T-shape array of 9 thin regions spaced 1500 ± 50 nm center-to-center. The top and vertical bars were etched with a laser intensity of ~30 mW and 45 mW, respectively, for 4 minutes each. Next to the T is a lithography-fabricated thin region (20 ± 2 nm) for comparison. (b) Zoom in of just the T. (c) TEM image of the T, showing a difference in brightness for the top and vertical bars, corresponding with a difference in thickness. (d) Nanopore formed in one of the thin regions.