Table 2.
Summary of published works on the deposition of c-axis AlN films.
| Authors [ref] (Year of Publication) |
Substrate | Sputtering Type | Power (W)/Power Density (W/cm2) | Substrate Temperature (°C) | Sputtering Pressure (mTorr) | Base Pressure (mbar) | Nitrogen (%) | Total Gas (sccm) | Distance Target to Substrate (cm) | FWHM (°) | Deposition Rate (nm/min) | Film Thickness (µm) | Surface Roughness (nm) | Notes |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Ohtsuka et al. [17] (2016) |
sapphire | Pulsed DC magnetron sputtering | 800/9.86 | 550 | 3 to 11 | - | 50 | - | 6 | 3.3 (rocking curve) |
60 | 1.5 | - | Effect of sputtering pressure on crystalline quality and residual stress. |
| Stan et al. [18] (2015) |
Si | RF magnetron sputtering | - | 50 | 1.5 | - | 25 | 40 | 3.5 | 11, 7.1 (rocking curve) |
19 | 0.6, 1.1 | 0.5 to 1.6 | Investigated electric and pyroelectric properties of deposited films. |
| Wang et al. [19] (2016) |
Glass | DC magnetron sputtering | 170/9.55 | 400 | 9 | - | 15 | 35 | 4.7 | - | 66.5 | 8.35 | 48 | Effects of substrate temperature and bias voltage on crystal orientation. |
| Jiao et al. [20] (2015) |
Si (100), Si (111), SiO2, and amorphous Si (α-Si) | RF Magnetron sputtering | 150, 200, 250, 300/5.3, 7.07, 8.84, 10.6 | 25 | 5 | 5 × 10−4 | 50, 66, 75, 80 | 60 | 6 | - | - | - | 4.22 | Effect of various Si substrates on film quality. Effect of RF power and gas flow on residual stress and film quality. |
| Bi et al. [21] (2014) |
Si (100) | DC magnetron sputtering | 460/5.34 | 400 | 3 | 1 × 10−10 | 85 | 22.8 | 7.5 | 1.63 (rocking curve) |
7.5 | 1.8 | - | Measured the longitudinal piezoelectric coefficient of deposited films. |
| Shih et al. [22] (2014) |
Si3N4/Si | RF Magnetron sputtering | 200, 250, 300/NA | 300 | 5, 10, 15 | 6.6 × 10−8 | 60 | 5 | - | 11.2 | 1.9 | 6.42 | Effect of RF power and sputtering pressure on film quality. Fabricated SAW device. |
|
| Stoeckel et al. [23] (2014) |
Si (100) | Pulsed DC magnetron sputtering | 865/7.6 | 350 | 5.25 | - | 80 | 7.5 | 0.39 (diffraction peak) |
0.204 | - | - | Measured transverse piezoelectric coefficient d31 using laser Doppler vibrometer (LDV). | |
| Lim et al. [24] (2001) |
Si, Ru/Si and ZnO/Si | RF magnetron sputtering | - | 150 | 0.5 | - | 50 | - | 5 | 5.96, 4.05, 1.19 (rocking curve) |
8.4 | 0.5 to 0.6 | - | Efects of Si, Ru/Si and ZnO/Si substrates on the crystal quality of AlN film. |
| Yang et al. [25] (2014) |
Mo/Si (100) | RF magnetron sputtering | 200/7.07 | 20 to 600 | 7.5 | 2 × 10−7 | 50 | 6.5 | 2.4 (rocking curve) |
- | - | - | Effect of substrate temperature on film quality. | |
| García Molleja et al. [26] (2013) |
SiO2/Si (100) | DC reactive magnetron sputtering | 100/11.68 | 25 | 3 | 2 × 10−8 | 30 | 3 | 0.8 to 0.19 (diffraction peak) |
- | 1.5 | - | Effect of film thickness on residual stress and film quality. | |
| Monteagudo-Lerma et al. [27] (2013) |
C-sapphire | RF reactive sputtering | 100–175/5.1–8.94 | 400 | 3.5 | 1 × 10−5 | 100 | 10.5 | 1.63 (rocking curve) |
- | - | 0.4 | Effect of substrate bias, RF power and substrate temperature on deposited films. | |
| Aissa et al. [28] (2013) |
Si (100) | DC Magnetron sputtering | 150/7.66 | Room temp | 3 | 6 × 10−5 | 35 | 40 | 3 | - | 20 to 40 | 580 for DCM and 980 for HiPMS | - | Comparison of the structural properties and residual stress as a function of sputtering pressure deposited via DCM and HiPMS. |
| Kale et al. [29] (2012) |
Si, copper, quartz | RF magnetron sputtering | 100/1.27 | 200 | 6 | 1 × 10−7 | 50 | - | 5 | - | - | - | - | Structural and electrical properties as a function of N2 concentration. |
| Rodríguez-Madrid et al. [30] (2012) |
Microcrystalline diamond | Balanced magnetron sputter deposition | 700/NA | 25 | 3 | 6.6 × 10−7 | 75 | 12 | 4.5 | 2 (rocking curve) |
- | 3 | 4.2 | Effect of film thickness on film quality for SAW devices. |
| Jin et al. [31] (2013) |
Si (100) | DC magnetron sputtering | 270/9.55 | 430 | 3 | 5 × 10−6 | 50 | 100 | - | 2.259 (rocking curve) |
21.78 | 1 | 1.97 | Effect of substrate temperature on structural properties. |
| Ababneh et al. [32] (2012) |
Ti/Si02/Si | DC magnetron sputtering | 1000/3.183 | - | - | 4 × 10−3 | 100 | - | 6.5 | 0.3 (diffraction peak) |
- | 0.6 | 1 | Investigate the effect of the thickness and surface roughness of the Ti substrate to the crystal quality of the AlN film. |
| García-Gancedo et al. [33] (2011) |
IR/Si (100) | Pulse DC magnetron sputtering | 1200/6.79 | 400 | 1.2 | 2.3 × 10−5 | 70 | - | - | 1.8 (rocking curve) |
40 | 1.5 | 7 | Sputtered AlN film to make bulk acoustic wave (BAW) sensors for biometric applications. |
| Phan and Chung [34] (2011) |
Si (100) | Pulse DC magnetron sputtering | - | 25 | 3.5 | 5 × 10−7 | 90 | - | 8 | 0.21 (diffraction peak) |
8 | - | - | Effect of post annealing treatment for acoustic wave applications. |
| Singh et al. [35] (2011) |
N-type Si (100) | RF magnetron sputtering | 100,200,300/2.19,4.38,6.57 | 25 | 5, 10, 20 | 2 × 10−6 | 50 | - | 5 | - | - | - | - | Effect of sputtering pressure on deposited films. |
| Cardenas-Valencia et al. [36] (2011) |
Sapphire | Pulse DC magnetron sputtering | 205/8.2 | 860 | 1.25, 1.5 | - | 50 | 11.5 | - | 0.32 (diffraction peak) |
200 | - | - | Novel sputtering method as the magnet was embedded in the target. |
| Iriarte et al. [37] (2011) |
Au/Si substrate | Pulsed DC reactive ion beam | 900/NA | 50 | 2 | 6.6 × 10−8 | 55 | 65 | 5.5 | 1.3 (rocking curve) |
- | - | 1.43 | AlN growth on top of Au buffer layer. |
| Moreira et al. [38] (2011) |
P-Si (100) | DC magnetron sputtering | 50/2.04 | 50 | 3 | 2 × 10−8 | 27 | 80 | - | - | 70 | - | - | Electrical characterization of AlN prepared at different N2 concentration. |
| Singh et al. [39] (2011) |
Glass, Si, oxidized Si, Al–SiO2–Si, Cr– SiO2–Si, and Au–Cr–SiO2–Si | RF magnetron sputtering | 100,200,300/2.19,4.38,6.57 | 25 | 5,10,20 | 2 × 10−6 | 100 | - | - | 0.32–0.40 (diffraction peak) |
- | 1 | 7.7 | Comparison of AlN sputtered at different power and pressure on various substrates. |
| Subramanian et al. [40] (2011) |
Si (100), glass | DC magnetron sputtering | 180/NA | 200 | 1.5 | 1 × 10−6 | 50 | - | 6 | - | - | - | - | Mechanical and optical properties of deposited films. |
| Ababneh et al. [41] (2010) |
Si (100) | DC Magnetron sputtering | 300, 500/1.59, 3.18 | 150–200 | 1.5, 4.5 | 5 × 10−6 | - | 50 | 6.5 | 0.29–0.35 (diffraction peak) |
6–12 | 0.5 | - | Effect of N2, sputtering pressure and DC power on deposited films. |
| Taurino et al. [42] (2017) |
SiO2/Si (100) | RF magnetron sputtering | 150/NA | - | 3 to 18 | 2 × 10−7 | 60 | - | 8 | - | - | 0.2 and 0.5 | - | Control the deposition pressure to switch from (101) to (002) planes. |
| Vashai et al. [43] (2009) |
Silicon | Pulse DC magnetron sputtering | 1500/3.18–11.45 | 300 | 2.1 | - | 100 | 50 | 6 | 1.2–2.4 (rocking curve) |
- | 0.28 pa | - | Influence of sputtering parameters on film quality. |
| Clement et al. [44] (2009) |
Iridium layers | Pulse DC magnetron sputtering | 10000/NA | 400 | 5 | 6.6 × 10−8 | 80 | - | 5 | 2 (rocking curve) |
24 | - | - | Comparison of BAW resonator performance on Mo and Ir substrates. |
| Cherng et al. [45] (2008) |
Si (100) | Pulse DC magnetron sputtering | 1500/NA | - | - | 4 × 10−6 | 40–100 | - | 7 | 2 (rocking curve) |
- | - | - | Two step deposition method by varying power, pressure and N2 concentration. |
| Abdallah et al. [46] (2008) |
Si (100) | DC reactive magnetron sputtering | - | 25 | 3 | 1.3 × 10−5 | 30 | - | 3 | 0.14–0.4 (FWHM of diffraction peak) |
40 | - | - | Effect of thickness on film quality. |
| Cherng and Chang [47] (2008) | Pulse DC magnetron sputtering | 600/NA | 25 | 2 | 5.3 × 10−7 | 60 | - | 7 | 2 (rocking curve) |
- | 1.6 | - | Role of base pressure in AlN deposition. | |
| Chiu et al. [48] (2007) |
DC reactive magnetron sputtering | 1000–1600/5.42–8.77 | 250–450 | 3–7.5 | - | 30–100 | - | 2–12 | 2.7° (rocking curve) |
12 | 2 | 1 | Effect of substrate temperature, sputtering power and N2 concentration on AlN films. | |
| Kano et al. [49] (2006) |
Si, SiO2 | RF magnetron sputtering | 460/NA | 100 | 3.75 | - | 50 | - | - | 8.3 (rocking curve) |
- | - | - | Measured piezoelectric coefficient. |
| Venkataraj et al. [50] (2006) |
DC reactive magnetron sputtering | 500/11.2 | Room temp | 6 | 1.3 × 10−4 | variable | - | 5.5 | 0.4 (diffraction peak) |
60 | - | - | Effect of N2 concentration on structural, optical and mechanical properties of deposited films. | |
| Benetti et al. [51] (2006) |
Diamond | RF magnetron sputtering | 500/2.74 | 200–500 | 3 | - | 100 | - | 5 | 0.4 (diffraction peak) |
- | - | - | Effect of sputtering temperature. |
| Kar et al. [52] (2006) |
Si (100) | RF magnetron reactive sputtering | 400/NA | 200 | 4.5 | 3 × 10−6 | variable | - | 5 | - | 5.5 | - | 2.4 | Effect of nitrogen concentration of film quality. |
| Umeda et al. [53] (2006) |
Si (100) | RF magnetron sputtering | 1300–1800/7.38–10.2 | 200 | 1.5 | 1 × 10−6 | 70 | 60 | 5 | 1.4 and 2.1 (rocking curve) |
- | - | 1.7 | Effect of sputtering parameters on residual stress |
| Guo et al. [54] (2006) |
Sapphire | RF magnetron sputtering | 100–250/1.27–3.18 | 100 | 5 | 1 × 10−7 | 40 | 9 | - | - | 8 | - | 6 | Effect of sputtering power. |
| Medjani et al. [55] (2006) |
Si (100) | RF magnetron sputtering | 150/NA | 25, 400,800 | 3.75 | 4 × 10−9 | 14 | 18 | 6.5 | - | - | - | - | Effect of substrate temperature and bias voltage on the crystallite orientation. |
| Vergara et al. [56] (2006) |
Si (100) | RF magnetron sputtering | - | 900–1300 | 6.75 | 2.5 × 10−7 | 50 | - | - | - | - | - | - | Effect of rapid thermal annealing on piezoelectric response. |
| Kar et al. [57] (2006) |
P-type Si (100) | RF magnetron sputtering | 400/NA | 100–400 | 4.5 | 3 × 10−6 | 80 | - | 8 | - | - | - | 2 | Role of sputtering temperature. |
| Jang et al. [58] (2006) | P-type Si | RF magnetron sputtering | 100/1.23 | 300 | 2–5.25 | 6.6 × 10−5 | - | - | - | - | - | - | - | Effect of rapid thermal annealing in oxygen ambient. |
| Kar et al. [59] (2005) |
Silicon, copper, quartz | RF magnetron reactive sputtering | 400/NA | 200 | 4.5 | 3 × 10−6 | 80 | - | 5 | 0.25 (diffraction peak) |
- | - | 2.1–3.68 | Influence of rapid thermal annealing on morphological and electrical properties. |
| Iriarte et al. [60] (2005) |
Al, Mo, Ti, TiN, and Ni | Pulse DC magnetron sputtering | 900/4.97 | - | 2 | 6.6 × 10−8 | 70 | - | 5.5 | 1.3 (rocking curve) |
- | - | - | Comparison of metallic substrates on crystal orientation. |
| Zhang et al. [61] (2005) |
Si (100), Si 111) | RF magnetron sputtering | 200–500/1.76–4.42 | 350 | 6 | 3.7 × 10−7 | 100 | - | 8 | - | - | - | - | Effect of sputtering power on crystal quality and strain in film. |
| Sanz-Hervas et al. [62] (2005) |
Al, Si02, Cr, Mo and Ti | RF reactive sputtering | 800/NA | - | 7 | - | 50 | - | - | - | - | - | - | Effect of substrate bias on crystal quality. |