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. 2018 May 26;8(6):371. doi: 10.3390/nano8060371

Figure 7.

Figure 7

(a) Typical diode I–V characteristics in linear scale and (b) reverse bias characteristics in log scale, of p-Si/n-ZnO NRs grown on as-coated and O2-plasma-treated (for 9 min) SLs under dark and UV illumination conditions.