Table 2.
Parameters for amorphous Silicon Etching with DRIE Oxford PlasmaLab 100 Systems.
| Parameter | Value | Gases | Passivation | Etching |
|---|---|---|---|---|
| Pressure | 10 mTorr | C4F8 | 100 sccm | 5 sccm |
| RF | 35 W | SF6 | 5 sccm | 100 scc |
| ICP | 250 W | Ar | 50 sccm | 50 sccm |
| Temperature | 10 °C |
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.