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. 2018 Jun 6;5(6):172370. doi: 10.1098/rsos.172370

Table 1.

Electrical properties of silicon–carbon anodes with different structures. Qr1, the first reversible capacity; CE, coulombic efficiency; QdN(N), discharge capacity in Nth cycle; C.R.N., capacity retention in Nth cycle. NWs, nanowires; NFs, nanofibres; NTs, nanotubes; NSs, nanospheres.

anode material structure method Qr1 (mAh g−1) (initial CE) current density QdN (mAh g−1) (N) C.R.N % ref.
C–SiNWs NWs CVD 1700.0 0.2 C 1300.0 76.5 [36]
(90.0%) (30)
C–SiNWs NWs solution-based syntheses 2300.0 0.1 C 2000.0 87.0 [37]
(96.0%) (100)
HCNFs–Si NFs CVD 941.4 0.6 C 733.9 77.9 [38]
(78.5%) (20)
3D Si/C FP NFs electrospray/electrospinning technique 1589.0 0.5 A g−1 1267.0 79.7 [39]
(80%) (100)
PC/Si NFs NFs electrospinning 1639.0 0.1 A g−1 1199.0 73.2 [40]
(83.6%) (10)
Si–CNF–P NFs electrospinning 1957.0 2.0 A g−1 1187.0 60.6 [41]
(79.3%) (400)
MWCNT@Si NTs magnesiothermic reduction 1547.0 0.4 A g−1 800.0 51.7 [42]
(51.0%) (10)
MWCNT–Si NTs CVD 3000.0 0.3 A g−1 2280.0 76.0 [43]
(96%) (50)
Si/ACNT NTs CVD 1496.0 0.1 A g−1 1198.0 80.0 [44]
(66.4%) (300)
MSi@C sphere magnesiothermic reduction 1375.0 0.05 A g−1 1054.0 76.7 [16]
(83.0%) (100)
Si@C NSs sphere chemical reduction 888.6 0.2 A g−1 610.7 68.7 [45]
(52.0%) (50)
HSi@C sphere templating method and carbonization 1610.0 2.0 A g−1 800.0 49.7 [46]
(70.0%) (120)
Si@void@C sphere CVD and magnesiothermic reduction 901.0 1.0 A g−1 796.0 88.3 [47]
(62.5%) (100)
p-Si@C sphere partial magnesiothermic reduction 1287.0 0.5 A g−1 1146.0 89.1 [48]
(69.4%) (100)