Table 1.
anode material | structure | method | Qr1 (mAh g−1) (initial CE) | current density | QdN (mAh g−1) (N) | C.R.N % | ref. |
---|---|---|---|---|---|---|---|
C–SiNWs | NWs | CVD | 1700.0 | 0.2 C | 1300.0 | 76.5 | [36] |
(90.0%) | (30) | ||||||
C–SiNWs | NWs | solution-based syntheses | 2300.0 | 0.1 C | 2000.0 | 87.0 | [37] |
(96.0%) | (100) | ||||||
HCNFs–Si | NFs | CVD | 941.4 | 0.6 C | 733.9 | 77.9 | [38] |
(78.5%) | (20) | ||||||
3D Si/C FP | NFs | electrospray/electrospinning technique | 1589.0 | 0.5 A g−1 | 1267.0 | 79.7 | [39] |
(80%) | (100) | ||||||
PC/Si NFs | NFs | electrospinning | 1639.0 | 0.1 A g−1 | 1199.0 | 73.2 | [40] |
(83.6%) | (10) | ||||||
Si–CNF–P | NFs | electrospinning | 1957.0 | 2.0 A g−1 | 1187.0 | 60.6 | [41] |
(79.3%) | (400) | ||||||
MWCNT@Si | NTs | magnesiothermic reduction | 1547.0 | 0.4 A g−1 | 800.0 | 51.7 | [42] |
(51.0%) | (10) | ||||||
MWCNT–Si | NTs | CVD | 3000.0 | 0.3 A g−1 | 2280.0 | 76.0 | [43] |
(96%) | (50) | ||||||
Si/ACNT | NTs | CVD | 1496.0 | 0.1 A g−1 | 1198.0 | 80.0 | [44] |
(66.4%) | (300) | ||||||
MSi@C | sphere | magnesiothermic reduction | 1375.0 | 0.05 A g−1 | 1054.0 | 76.7 | [16] |
(83.0%) | (100) | ||||||
Si@C NSs | sphere | chemical reduction | 888.6 | 0.2 A g−1 | 610.7 | 68.7 | [45] |
(52.0%) | (50) | ||||||
HSi@C | sphere | templating method and carbonization | 1610.0 | 2.0 A g−1 | 800.0 | 49.7 | [46] |
(70.0%) | (120) | ||||||
Si@void@C | sphere | CVD and magnesiothermic reduction | 901.0 | 1.0 A g−1 | 796.0 | 88.3 | [47] |
(62.5%) | (100) | ||||||
p-Si@C | sphere | partial magnesiothermic reduction | 1287.0 | 0.5 A g−1 | 1146.0 | 89.1 | [48] |
(69.4%) | (100) |