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. 2018 Jun 29;9:1895–1905. doi: 10.3762/bjnano.9.181

Figure 4.

Figure 4

SEM images. Sample 3 deposited at 425 °C and −30 V bias voltage: straight CNWs; sample 2 deposited at 500 °C and 0 V bias voltage: curled CNWs. All grown on silicon substrates. Cross-section images taken under from an angle of 45°.