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. 2018 Jul 16;9:2737. doi: 10.1038/s41467-018-05155-y

Table 2.

Device parameters of different OFETs using 40 μm-thick ICCN acting as dielectrics

Semiconductor Threshold voltage (VT) (V) Mobility (cm2 V−1 s−1) On/off ratio
C8-BTBT −1.26 7.24 × 10−2 6.89 × 103
NTCDI-F15 0.16 9.87 × 10−3 2.30 × 103
PQT-12 0.28 2.13 × 10−2 2.97 × 102