Table 1.
Effects of 500nM OT on insular cortex pyramidal intrinsic membrane properties
| Property | aCSF | 500nM OT | t(26) | p-value | |
|---|---|---|---|---|---|
| Active | Mean(SEM) | Mean(SEM) | |||
| AP threshold (mV) | −41.39 (0.83) | −41.89 (1.06) | 0.893 | 0.380 | |
|
|
|||||
| Rheobase (pA) | 1507 (85.5) | 1429 (81.4) | 3.217 | **0.004 | |
|
|
|||||
| Rise Rate (mV/ms) | 225.4(13.04) | 206.9 (13.42) | 2.454 | *0.021 | |
|
|
|||||
| Spike Amplitude (mV) | 82.72 (1.95) | 78.31(2.46) | 2.846 | **0.009 | |
|
|
|||||
| Spike Width (ms) | 1.13 (0.05) | 1.20 (0.06) | 2.487 | *0.020 | |
|
|
|||||
| Decay rate (mV/ms) | −84.52 (3.16) | −77.93 (3.54) | 3.471 | **0.002 | |
|
|
|||||
| ADP (mV) | 11.40 (0.84) | 11.60 (0.91) | 0.664 | 0.512 | |
|
|
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| Passive | |||||
| Resting potential (mV) | −69.2 (0.9) | −68.1 (1.1) | 2.705 | *0.012 | |
|
|
|||||
| Time Constant (mV) | 25.74(0.51) | 23.81(0.68) | 2.947 | **0.007 | |
|
|
|||||
| Input Resistance (MΩ) | 103.7(6.23) | 118.3(7.46) | 5.473 | ***<0.001 | |
|
|
|||||
| Rectification Ratio | 0.812(0.015) | 0.824(0.015) | 1.575 | 0.127 | |
|
|
|||||
| Sag (mV) | 1.43(0.22) | 1.10(0.15) | 2.342 | *0.027 | |
|
|
|||||
| sAHP (mV × ms) | −320.3(36.13) | −230.6(31.49) | 3.336 | **0.003 | |
|
|
|||||
N = 27 cells;
*
p < 0.05,
**
p < 0.01,
***
p< 0.001