Fig. 2.

Fabrication and correction on hydrogen-terminated Si(100)-2×1 via hydrogen lithography and hydrogen repassivation. a (V = 1.4 V, I = 50 pA, T = 4.5 K, 10 × 10 nm²) Scanning tunneling microscope image of the fabrication area used to determine the location of each hydrogen atom through Fourier image analysis. b (V = −1.7 V, I = 50 pA, T = 4.5 K, 10 × 10 nm²) Fabrication of the characters “150” using hydrogen lithography (HL), one atom has been removed in error above the characters and one atom is incorrectly placed inside the “5”. The created dangling bonds (DBs) appear as bright protrusions. c, d Using the hydrogen repassivation technique, the errors were subsequently erased, then the correct hydrogen atoms were removed with HL to create an error-free structure. e (V = −1.7 V, I = 50 pA, T = 4.5 K, 11 × 21 nm²) The completed structure of 54 DBs, depicting the characters “150” and a maple leaf. Scale bar, 5 nm