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. 2016 Feb 12;5(2):e16017. doi: 10.1038/lsa.2016.17

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Copyright © 2016 Changchun Institute of Optics, Fine Mechanics and Physics

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/

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(a) LSPR can decay radiatively or non-radiatively. The radiative decay emits photons. During the non-radiative decay, hot electrons may be generated via intra- and inter-band excitation of the conduction electrons. (b) The energies of hot electrons have a wide distribution range. (c) The hot electrons with large energy can surmount the interface Schottky barrier, thus being injected into the conduction band of the semiconductor. Figure reproduced with permission: Ref. 27, © 2014 NPG. LSPR, localized surface plasmon resonance; DOS, density of states.