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. 2018 Jul 26;9:2926. doi: 10.1038/s41467-018-05301-6

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Detector performance under X-ray irradiation. a X-ray photocurrent densities for devices with different Bi₂O₃ loadings from Bi₂O₃-0 to Bi₂O₃-40 and b from Bi₂O₃-0 to Bi₂O₃-80. c Averaged sensitivity values for six devices and the error bars represent the range of the sensitivity values. d Comparison between number of X-ray photons absorbed by each device and the number of charges extracted. e The voltage dependence of the Bi₂O₃-40 device, f X-ray photocurrent response of the Bi₂O₃-40 detector under 0, −0.1 and −1 V biases. g Rise and decay time constants (the error bars represent the standard error shown with respect to the fitted curves) for detectors with increasing Bi₂O₃ loadings under −10 V bias. h X-ray photocurrent response before and after bending for a flexible Bi₂O₃-40 device. i A prototype X-ray detector integrated into a plaster and detector bend radius (0.3 cm)