Fig. 5.

Charge transport analysis. a Time-of-flight transients of electrons for the Bi₂O₃-20 device for the applied reverse-bias voltages from 8 to 20 V. b The double logarithmic plot of the time of flight transient presented in a. Electric field dependency of c electron mobility (data have been fitted to show the mobility dependency under the electric field) and d hole mobility of devices from Bi₂O₃-0 to Bi₂O₃-80. Here, the error bars represent the range of three measurements carried out under each condition. e The collected electron charge for different devices based on a fit to the Hecht equation