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. 2018 Jul 15;18(7):2289. doi: 10.3390/s18072289

Figure 2.

Figure 2

(a) Room-temperature micro-photoluminescence analysis on 100 µm 4H–SiC epitaxies grown with two process typologies (at 90 μm/h and 60 μm/h) and 10 µ; (b) room-temperature photoluminescence (RTPL) analysis on semi-insulating substrates for E detector, after oxidation and thermal treatments at 1500 °C for different annealing times.