Table 1.

Comparison between silicon versus SiC properties.

Properties	4H–SiC	Si
Egap [eV]	3.23	1.12
Ebreakdown [V/cm]	3–4 × 106	3 × 105
µe [cm2/Vs]	800	1450
µh [cm2/Vs]	115	450
Vsaturation [cm/s]	2 × 107	0.8 × 106
Z	14/6	14
εr	9.7	11.9
E–h energy [eV]	7.6–8.4	3.6
Density [g/cm3]	3.22	2.33
Displacement E [eV]	30–40	13–15
Thermal Conductivity [W/cm·K]	4.9	1.5