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. 2018 Aug 1;8:11545. doi: 10.1038/s41598-018-29942-1

Figure 1.

Figure 1

(a) Absorbance spectra of MoSe2 crystals and mechanically exfoliated flakes on sapphire with two excitonic peaks A and B, (b) optical microscopy image and schematic cross-section of an MoSe2 phototransistor along the red line, (c) Id − Vg and (d) Id − Vd characteristics of an MoSe2 phototransistor with different optical power of incident light.