Table 1.
Performance of MoSe2 phototransistors measured at Pin = 10–100 mWcm−2.
| Type of MoSe2 | μFΕ (cm2v−1s−1) | R (AW−1) | D* (jones) | Response time (ms) | Reference |
|---|---|---|---|---|---|
| Multilayer flake (Exfoliation) | 50.6 | 519.2 | 1.3 × 1012 | 1.7 (rise) 2.2 (fall) | This work |
| Few layer flake (Exfoliation) | 19.7 | 97.1 | — | 15 (rise) 30 (fall) | 15 |
| Single layer film (CVD)i | — | 0.013 | — | 60 (rise) 60 (fall) | 16 |
| Multilayer flake (CVD)i | 10.1 | 93.7 | — | 400 (rise) 200 (fall) | 17 |
| Multilayer flake (Exfoliation) | 5.9 or 16ii | 0.1 or 16ii | 1.0 × 1011ii | 5 (fall)ii | 13 |
| Few layer flake (Exfoliation) | 1.8 | 0.026 | — | 20 (rise) 20 (fall) | 18 |
| Few layer flake (Exfoliation) | 5.1 | 238 | 7.6 × 1011 | — | 19 |
iChemical vapor deposition.
iiWith HfO2 encapsulation.