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. 2018 Aug 3;9:3058. doi: 10.1038/s41467-018-05499-5

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — Illustration of the concept used to rotate the natural quantization axis of an epitaxial QD. a 3D view of an AFM image of a GaAs QD embedded in AlGaAs matrix. b, c Calculated effect of uniaxial stress along the [100] crystal direction on the degree of mixing of the topmost VB using the z and x quantization axis, for bulk GaAs subject to a fixed in-plane biaxial compression with σ_xx = σ_yy = −120 MPa (solid curves) and for the experimentally studied QDs (symbols). The plots illustrate the importance of the choice of the quantization axis when discussing VB mixing and show that the natural quantization axis of the chosen QDs can be flipped with moderate strains. Insets: Angular dependence of the probability density distribution of the Bloch wavefunctions of the topmost VB states at the Γ point showing the conversion of a HH_z state into a HH_x (LH_x) state under tension (compression)