Table 1.
Interface type | Materials (ref) | Adhesion energy (mJ/m2) |
2D crystal vdW heterostructures | MoS2–MoS2 (13) | 174 ± 18 |
G–MoS2 (20) | 140 ± 26 | |
MoS2–hBN (13) | 136 ± 11 | |
hBN–hBN (13) | 129 ± 4 | |
G–hBN (13, 49) | 126 ± 20 | |
G–HOPG (22) | 86 ± 16 | |
2D crystal on a substrate | G-Ice (20) | 124 ± 30 |
G–CaF2 (28) | 104 | |
MoS2–Al2O3* | 101 ± 15 | |
G–SiO2* | 93 ± 1 | |
MoS2–SiO2* | 82 ± 1 | |
Graphene interfaces without blisters | G–V2O5 (9) | ≤108 |
G–sapphire (50) | ≤107 | |
G–Mica (51–54) | ≤102 | |
G–Si (55) | ≤72 | |
G–SiC (56) | ≤57 |