Fig. 5.

Gate control of the spin–charge conversion in thin Pt films. a Resistance modulation under application of the gate voltage V_G for the d_Pt = 2 nm sample. b Electromotive force detected from d_Pt = 2 nm sample for V_G = −2.0 V and V_G = 2.0 V averaged over opposite directions of the external magnetic field (θ_H = 0° and θ_H = 180°) to remove spurious contributions; |B′| = µ₀(H−H_Center). c Comparison of the normalized spin–charge conversion current I_ISHE/I_ISHE^max between different devices, where I_ISHE = V_ISHE/R—amplitude of the generated via the ISHE spin–charge conversion current. Blue filled circles—Device A with d_Pt = 2 nm, purple filled circles—Device A with d_Pt = 2 nm remeasured, green filled circles—Device B with d_Pt = 2 nm (V_ISHE(V_G) and R(V_G) can be found in Supplementary Note 10), red filled circles—device with d_Pt = 2.5 nm, gray filled circles—device with d_Pt = 10 nm. Comparing to the 10 and 2.5 nm devices, 2.0 nm devices showed larger modulation of the ISHE current, as expected from the carrier density modulation mechanism