Figure 10.

(a) Schematic of all carbon-based PD; (b) Under light illumination, the hole can transfer from graphite quantum dots to graphene sheets. The photo-generated electrons are trapped in graphite quantum dots; (c) Transfer characteristics of graphene transistors with and without the addition of graphite QDs on the graphene sheet; (d) Photocurrent of all carbon-based photodetectors for different optical powers as functions of drain-source voltage (V_DS), showing a linear dependence on bias. The PC for the pure graphene device without graphite quantum dots is also shown here, which indicates a negligible effect. Reproduced with permission for Figure 10a–d from 2013 Scientific Reports [81].