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. 2018 Jul 5;9(7):341. doi: 10.3390/mi9070341

Figure 8.

Figure 8

Three-dimensional lithography profiles of a cross-shaped mask with perpendicular incidence by using a comprehensive lithography simulation: exposure time = 250 s, development time = 12 min. The first step PEB condition was 65 °C/12 min and the second step PEB condition was 95 °C/40 min.