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. 2018 Jul 5;9(7):341. doi: 10.3390/mi9070341

Figure 11.

Figure 11

3D simulation results of UV lithography for 240 ± 12 μm thick SU-8 with a complex mask shape on glass wafer with TiO2 film as antireflection layer: exposure time = 380 s, development time = 13 min, the first step PEB condition was 65 °C/15 min, and the second step PEB condition was 95 °C/45 min.