Table 3.

Atomic percentages for the 2wk rinsed HFM surfaces as determined by X-ray photoelectron spectroscopy.

	C	O	N	Si	S
PMP-A (2 wk)	78.0 (±0.8)	14.2 (±0.4)	6.0 (±0.5)	0.5 (±0.1)	0.2 (±0.0)
PMP-A-SBMA (2 wk)	75.5 (±0.6)	19.7 (±0.5)	2.9 (±0.2)	0.4 (±0.1)	0.4 (±0.1)
PMP-H-SBSi (2 wk)	76.4 (±0.4)	19.3 (±1.3)	2.2 (±0.2)	1.8 (±0.5)	0.3 (±0.1)
PMP-A-SBNHS (2 wk)	71.8 (±1.1)	17.7 (±0.7)	6.2 (±0.1)	0.7 (±0.1)	0.9 (±0.1)
PMP-H-SBNHSi (2 wk)	81.4 (±0.2)	14.3 (±0.2)	2.0 (±0.3)	0.8 (±0.1)	1.0 (±0.1)

All rinsed samples (2 wk) were EtO treated then continuously rinsed with PBS (with sodium azide 0.02%) at 37°C for 2 wk (n=3, mean ± st. dev.).