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. 2018 Jun 27;18(8):5319–5323. doi: 10.1021/acs.nanolett.8b02406

Figure 3.

Figure 3

Using a Si heteroatom as an atomic bit. (a) A single Si heteroatom repeatedly moved from one graphene sublattice to the other (aligned and colored STEM/MAADF images). The overlaid numbers show the number of 10 s spot irradiations preceding each frame, and the triangles indicate the ordering of the frames. (b) The Si migration barrier calculated with the nudged elastic band method within DFT is close to 4 eV. (c) The dash-outlined 4.94 × 4.28 Å graphene area contains a single Si atom, whose position on either of the sublattices could correspond to a bit value of either 0 or 1.