Figure 4. SthK channel voltage dependence.
(A) SthK voltage sensor domain (grey) with the 4 positively-charged residues in S4 in blue and L54 in S2 in green. The boxes zoom into the coordination between R111 and countercharges in S3 and S2 (orange) and between K114 and countercharges in S3 and S2 (green). Experimental density shown in light grey at 6 σ (top) and 4 σ (bottom). Dot representation displays water accessible cavities in the voltage sensor calculated with the program HOLE (red: pore radius <1.15 Å; green: pore radius 1.15–2.30 Å; blue: pore radius >2.30 Å). (B) Representative single-channel recording traces from SthK at different voltages (indicated, top of traces) displaying different open probabilities (indicated, right). The dashed line indicates the closed channel level. The traces were filtered online at 1 kHz and additionally filtered offline at 500 Hz. The ligand concentration was 1 mM cAMP. (C) Open probability as a function of voltage for the SthK channel for which selected traces are displayed in (B). Arrow indicates the open probability value at 0 mV, which is the voltage the channels experience on the cryo-EM grid. This experiment was performed for at least 7 different bilayers containing single SthK channels in saturating cAMP concentrations, and a plot showing an average Po vs. voltage curve is shown in ref. Schmidpeter et al. (2018).


