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. 2018 Aug 27;8:12840. doi: 10.1038/s41598-018-29717-8

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Photoresponse of the graphene/WTe₂ hybrid device. (a) Time-resolved photoresponse of the graphene/WTe₂ heterostructure device and pure graphene device under 650 nm laser switching on/off. (b) Responsivity of the graphene/WTe₂ phototransistor as function of the incident light power under 650 nm illumination. (c) EQE of the hybrid device as function of the incident light power under 650 nm illumination. (d) Transfer curves of the graphene/WTe₂ device in dark and under 650 nm laser illumination at V_DS = 0.5 V. Inset: Schematic diagram of potential step formation and the photo-induced carriers transporting process under light at the graphene-WTe₂ interface. Φ_G is the work function of graphene, Φ_W represents the work function of WTe₂, ∆V is the built-in potential difference. Solid sphere represents photo-induced electron, and hollow sphere is photo-induced hole.