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. 2018 Aug 28;8:12959. doi: 10.1038/s41598-018-31201-2

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Device structure and anomalous Hall resistance measurements. (a) Optical images of the patterned Hall bar and measurement configuration. Dependence of R_Hall on H_z is measured at the current of +0.1 mA for Pt/Co/SmO_x (b) and Pt/Co/AlO_x (c) stacks. (d) R_Hall versus H_x for Pt/Co/SmO_x and the inset for Pt/Co/AlO_x. The solid blue and green symbols correspond to “up” and “down” magnetized states, respectively. Red solid lines are the fitted curves. Switching phase diagram where H_sw varies against I for Pt/Co/SmO_x (e) and Pt/Co/AlO_x (f) stacks and the insets of them show the variation of R_Hall-H_z loops at different currents.