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. 2018 Aug 29;19(1):613–648. doi: 10.1080/14686996.2018.1494493

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© 2018 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Figure 15. — (a) TEM image of a SW defect, formed by rotating a carbon–carbon bond by 90° [214]. (b) STM topography of a sixfold defect observed in the growth of epitaxial graphene on SiC at −300 mV sample bias [228]. (c) Simulated STM image of the C6(1,1) defect using DFT calculations [228] (reused with permissions from [214] Copyright © 2008, American Chemical Society, and [228] Copyright © 2011 American Physical Society.).