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. 2018 Aug 29;19(1):613–648. doi: 10.1080/14686996.2018.1494493

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© 2018 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Figure 18. — (a) Schematic illustration of a combination of TEM observation and Raman spectroscopy for graphene. PMMA-A and PMMA-G correspond to PMMA facing the air and graphene respectively. Comparisons of the 2D peak positions before and after annealing for (c) Si-supported and (d) free-standing CVD graphenes. (e) Histogram of the Δ2D as a function of annealing temperature for both Si-supported and free-standing graphenes. (f) Schematic illustration of the electronic structure near the Dirac points of pristine (linear) and annealed (parabolic) CVD graphenes. All pictures are extracted from Ref [329] (reused with permission from [329] Copyright © 2012, American Chemical Society.).