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. 2018 Sep 3;9:3572. doi: 10.1038/s41467-018-05580-z

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — XPS depth profiling of Pd/b2-TiO₂/b-Si. a Ti 2p spectrum for the surface of Pd/b2-TiO₂/b-Si. b Ti 2p spectrum for the inner of Pd/b2-TiO₂/b-Si after the etching depth of 20 nm. c Elemental depth profile of Pd/b2-TiO₂/b-Si. d XPS VB spectra of the surface and inner (etching depth of 20 nm) of Pd/b2-TiO₂/b-Si. It must be mentioned that the extra C 1 s peak at 284.8 eV is derived from the carbonaceous contaminant absorbed in the sample surface