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. 2018 Sep 5;8:13283. doi: 10.1038/s41598-018-31296-7

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Crystal structure and sample characterization of GdSbTe. (a) Tetragonal crystal structure. Layers of Sb atoms form a square net. Sheets of Gd atoms are separated by two Te layers. (b) Core-level spectrum. Here, we clearly observe sharp peaks due to Te 4d (~40 eV), Sb 4d (~33 eV) and Gd 4 f (~8.5 eV) states. The black dashed line represents the Fermi level. (c) Temperature dependence of the reciprocal magnetic susceptibility measured in a magnetic field of 0.5 T applied within the crystallographic a-b plane. Solid line represents the fit of Curie-Weiss law to the experimental data. Upper inset: low-temperature magnetic susceptibility data. Lower inset: magnetic field variation of the magnetization taken at 1.72 K with increasing (full circles) and decreasing (open circles) magnetic field strength. (d) Ab-initio calculated bulk band structure along the high-symmetry directions. Red circle indicates the approximate position of the Dirac point.