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. 2018 Sep 5;8:13268. doi: 10.1038/s41598-018-31485-4

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Operando photoelectron nanospectroscopy results utilized to clarify effect of SiN passivation. (a) Line profile of the binding energy of the main Ga–N peak of the GaN-HEMT with SiN surface passivation under application of drain (30 V) and gate (−5 V) biases. (b) Estimated local electric field distribution with (thick line) and without (dotted line) SiN surface passivation.