Table 3. Experimental details.
| RbGa(HAsO4)2 | RbGa2As(HAsO4)6 | |
|---|---|---|
| Crystal data | ||
| Chemical formula | RbGa(HAsO4)2 | RbGa2As(HAsO4)6 |
| M r | 435.05 | 1139.40 |
| Crystal system, space group | Trigonal, R
c:H
|
Trigonal, R
c:H
|
| Temperature (K) | 293 | 293 |
| a, c (Å) | 8.385 (1), 53.880 (11) | 8.491 (1), 50.697 (11) |
| V (Å3) | 3280.7 (10) | 3165.4 (10) |
| Z | 18 | 6 |
| Radiation type | Mo Kα | Mo Kα |
| μ (mm−1) | 19.42 | 15.85 |
| Crystal size (mm) | 0.07 × 0.07 × 0.02 | 0.13 × 0.12 × 0.12 |
| Data collection | ||
| Diffractometer | Nonius KappaCCD single-crystal four-circle | Nonius KappaCCD single-crystal four-circle |
| Absorption correction | Multi-scan (SCALEPACK; Otwinowski et al., 2003 ▸) | Multi-scan (SCALEPACK; Otwinowski et al., 2003 ▸) |
| T min, T max | 0.343, 0.697 | 0.232, 0.252 |
| No. of measured, independent and observed [I > 2σ(I)] reflections | 3896, 1079, 1027 | 4684, 1287, 1196 |
| R int | 0.016 | 0.016 |
| (sin θ/λ)max (Å−1) | 0.704 | 0.757 |
| Refinement | ||
| R[F 2 > 2σ(F 2)], wR(F 2), S | 0.016, 0.040, 1.11 | 0.014, 0.034, 1.13 |
| No. of reflections | 1079 | 1287 |
| No. of parameters | 68 | 65 |
| No. of restraints | 2 | 2 |
| H-atom treatment | All H-atom parameters refined | All H-atom parameters refined |
| Δρmax, Δρmin (e Å−3) | 0.79, −0.53 | 0.75, −0.84 |
