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. 2018 Sep 13;8:13721. doi: 10.1038/s41598-018-31903-7

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Optoelectronic performances of Cu@graphene NWs TEs. (a) Transmittance as a function of sheet resistance for various advanced TE materials^13,36–41. (b) Optical transmittance spectrum of Cu@graphene NWs film. The inset is the photograph of the Cu@graphene TE film on quartz glass slice. (c) Schematics of electron transport on surface and interface along the Cu@graphene NW. (d) Processing steps of photolithographic patterning of Cu@graphene NW TEs on semiconductor wafer. The last image is the optical micrograph of patterned Cu@graphene NW TE pads in various sizes.