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. 2018 Sep 7;5(4):ENEURO.0112-18.2018. doi: 10.1523/ENEURO.0112-18.2018

Table 3.

Equations and parameters for the single-compartment bEIF model

Variable Equation
Membrane potential V CmdV(t)/dt=IL+Idep+Irep+Iinj
Leak current IL=GL(ELV)
Spike-generating (depolarizing) current Idep=GLKTAT(1+ATexp((VVT)/KT))
Repolarizing current Irep=Grep(t)(ELV)
Starting time of repolarizing current Trep:=t when V(t)Vrep
Repolarizing conductance (for t ≥ Trep) Grep(t)=GLArep((tTrep)τrep)exp(1(tTrep)τrep)
Intracellularly injected current Iinj=0 (default)
Parameter Value
Membrane capacitance density Cm 1.0 μF/cm2
Leak conductance density GL 0.1 mS/cm2
Leak reversal potential EL -65.3 mV
Threshold for spike-generating current VT -60.2 mV
Slope factor of the spike-generating current KT 3.5 mV
Ceiling factor of the spike-generating current AT 520 (no unit)
Starting voltage of repolarization current Vrep +10 mV
Time constant of repolarizing conductance τrep 0.60 ms
Amplitude factor of repolarizing conductance Arep 90 (no unit)