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. 2018 Sep 11;6:412. doi: 10.3389/fchem.2018.00412

Figure 4.

Figure 4

J-V characteristics of (A) hole-only devices and (B) electron-only devices based on solution-processed DIBSQ:PC71BM and vacuum-processed DIBSQ:C70 blend films, inset show the schematic structures of the corresponding single carrier devices.